MTS SR, DESIGN; DSGN
SWIR Vision Systems
Design
Scottsdale, AZ, USA
Posted on Feb 19, 2026
onsemi is currently seeking a highly experienced senior device and process integration expert to develop gallium nitride high electron mobility transistor (GaN HEMT) power switching devices for industrial and automotive applications.
onsemi (Nasdaq: ON) is driving disruptive innovations to help build a better future. With a focus on automotive and industrial end-markets, the company is accelerating change in megatrends such as vehicle electrification and safety, sustainable energy grids, industrial automation, and 5G and cloud infrastructure. With a highly differentiated and innovative product portfolio, onsemi creates intelligent power and sensing technologies that solve the world’s most complex challenges and leads the way in creating a safer, cleaner, and smarter world.
More details about our company benefits can be found here:
We are committed to sourcing, attracting, and hiring high-performance innovators, while providing all candidates a positive recruitment experience that builds our brand as a great place to work.
onsemi is an Equal Opportunity Employer. All qualified applicants will receive consideration for employment without regard to race, ethnicity, color, religion, ancestry, national origin, age, marital status, pregnancy, sex, sexual orientation, physical or mental disability, medical condition, genetic information, military or veteran status, gender identity, gender expression, or any other protected category under applicable federal, state, or local laws.
If you are an individual with a disability and require a reasonable accommodation to complete any part of the application process, or are limited in the ability or unable to access or use this online application process and need an alternative method for applying, you may contact Talent.acquisition@onsemi.com for assistance.
- Master’s degree and/or a PhD in Electrical Engineering, Physics, Materials Science, or related field.
- Expert in GaN HEMT device physics, structure, electrical operation.
- Experience in Fab processes and packaging of power technologies.
- Experience in TCAD simulations and layout tools.
- Knowledge of electrical characterization and testing of power semiconductor devices and GaN HEMT.
- Good understanding of degradation mechanisms of power GaN HEMT and device failure analysis.
- Knowledge of accelerated reliability tests of power semiconductor devices.
- Good understanding of IC related circuitry (gate driving, current sensing, etc) and fundamentals power electronics (gate loop, etc)
- 10 plus years of power semiconductor work experience including process integration and device fabrication.
- Excellent analytical and problem-solving skills.
- Capable of leveraging and reusing best practices across various technologies.
- Excellent interpersonal, verbal, and written communication skills, including listening, explaining, understanding, negotiating, persuading, and summarizing and presenting results.
- Able to work in multinational, culturally diverse, and cross-functional teams.
- Self-motivated, accountable, striving for continuous improvement.
- Develop, design, optimize, and qualify power GaN HEMT technology, device, and products.
- Conduct device and process simulations and electrical characterization.
- Support Tes Engineering in developing and implementing power GaN HEMT test programs.
- Debug device-related issues and propose a solution.
- Evaluate reliability and robustness of power GaN HEMT devices and products.
- Work closely with the IC team and Packaging team on product development.
- Interface, effectively collaborate, and build strong cross-functional relationships.
- Lead technology development projects.